Erlebach, Axel: search on Z-Library

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1

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - TCAD methodology for simulation of GaN-HEMT power devices

Strauss, Stephan, Erlebach, Axel, Cilento, Tommaso, Marcon, Denis, Stoffels, Steve, Bakeroot, Benoit

Year:

2014

Language:

english

File:

PDF, 1.01 MB

english, 2014

2

[IEEE 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Columbus, OH, USA (2013.10.27-2013.10.29)] The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications - From TCAD device simulation to scalable compact model development for GaN HEMT powerbar designs

Stoffels, S., Ronchi, N., De Jaeger, B., Marcon, D., Decoutere, S., Strauss, Stephan, Erlebach, Axel, Cilento, Tommaso

Year:

2013

Language:

english

File:

PDF, 498 KB

english, 2013

3

[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Modeling gate-pitch scaling impact on stress-induced mobility and external resistance for 20nm-node MOSFETs

Kim, Seong-Dong, Jain, Sameer, Rhee, Hwasung, Scholze, Andreas, Yu, Mickey, Lee, Seung Chul, Furkay, Stephen, Zorzi, Marco, Bufler, Fabian M., Erlebach, Axel

Year:

2010

Language:

english

File:

PDF, 144 KB

english, 2010

4

Layer Thickness and Stress-Dependent Correction for InGaAs Low-Field Mobility in TCAD Applications

Penzin, Oleg, Smith, Lee, Erlebach, Axel, Lee, Ko-Hsin

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.01 MB

english, 2015

5

Process simulation of dopant diffusion and activation in germanium

Zographos, Nikolas, Erlebach, Axel

Journal:

physica status solidi (a)

Year:

2014

Language:

english

File:

PDF, 285 KB

english, 2014

6

Influence of HALO and drain-extension doping gradients on transistor performance

Axel Erlebach, Thomas Feudel, Andreas Schenk, Christoph Zechner

Journal:

Materials Science and Engineering: B

Year:

2004

Language:

english

File:

PDF, 89 KB

english, 2004

7

Accurate and efficient TCAD model for the formation and dissolution of small interstitial clusters and {3 1 1} defects in silicon

Christoph Zechner, Nikolas Zographos, Dmitri Matveev, Axel Erlebach

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 111 KB

english, 2005

8

Phase-field model for the dopant redistribution during solid phase epitaxial regrowth of amorphized silicon

Christoph Zechner, Dmitri Matveev, Axel Erlebach

Journal:

Materials Science and Engineering: B

Year:

2004

Language:

english

File:

PDF, 94 KB

english, 2004

9

Long-term outcomes after transcatheter aortic valve implantation in failed bioprosthetic valves

Bleiziffer, Sabine, Simonato, Matheus, Webb, John G, RodÃ©s-Cabau, Josep, Pibarot, Philippe, Kornowski, Ran, Windecker, Stephan, Erlebach, Magdalena, Duncan, Alison, Seiffert, Moritz, Unbehaun, Axel,

Journal:

European Heart Journal

Year:

2020

File:

PDF, 1.12 MB

2020

10

Kinetic Velocity Model to Account for Ballistic Effects in the Drift-Diffusion Transport Approach

Penzin, Oleg, Smith, Lee, Erlebach, Axel, Choi, Munkang, Lee, Ko-Hsin

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 960 KB

english, 2017

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